An electron beam apparatus is provided for evaluating a sample at a high throughput and a high S/N ratio. As an electron beam emitted from an electron gun is irradiated to a sample placed on an X-Y-.theta. stage through an electrostatic lens, an objective lens and the like, secondary electrons or reflected electrons are emitted from the sample. The primary electron beam is incident at an incident angle set at approximately 35.degree. or more by controlling a deflector. Electrons emitted from the sample is guided in the vertical direction, and focused on a detector. The detector is made up of an MCP, a fluorescent plate, a relay lens, and a TDI (or CCD). An electric signal from the TDI is supplied to a personal computer for image processing to generate a two-dimensional image of the sample.