A method of forming a semiconductor structure includes forming an isolation region in a semiconductor substrate. A first oxide layer is on the substrate, a first sacrificial layer is on the first oxide layer, and a first nitride layer is on the first sacrificial layer. The first oxide layer may be a screen oxide layer, and the method provides consistency in the thickness of the screen oxide layer.

 
Web www.patentalert.com

> Method of fabricating a semiconductor device by doping impurity element into a semiconductor layer through a gate electrode

~ 00323