Provided is a field emission display (FED) with a carbon nanotube emitter and a method of manufacturing the same. A gate stack that surrounds the CNT emitter has a mask layer that covers an emitter electrode adjacent to the CNT emitter, and a gate insulating film, a gate electrode, a focus gate insulating film (SiO.sub.x, X<2), and a focus gate electrode formed on the mask layer. The focus gate insulating film has a thickness 2 .mu.m or more, and preferably 3.about.15 .mu.m and is preferably made using PECVD. A flow rate of silane and nitric acid for forming the focus gate insulating film and/or the gate insulating film are maintained at 50.about.700 sccm and 700.about.4,500 sccm, respectively. By doing so and by making the oxide thick, the oxide is less apt to crack and thus less apt to generate a leakage current.