Semiconductors having electrically coupled gate and impurity doped regions and methods for fabricating the same are provided. A method in accordance with an embodiment of the invention comprises forming a gate electrode overlying a substrate and an impurity doped region within the substrate. A first spacer is formed on a first side and a second spacer on a second side of the gate electrode. An ion is implanted into the first spacer with an angle greater than zero from an axis perpendicular to the surface of the substrate. The first spacer is etched to remove a portion thereof and a silicon film is deposited overlying a remainder of the first spacer, the impurity doped region and the second spacer. The silicon film is etched, forming a silicon spacer, and a silicide-forming metal is deposited to form a silicide contact that electrically couples the gate electrode and the impurity doped region.