A superlattice nanocrystal Si--SiO.sub.2 electroluminescence (EL) device and fabrication method have been provided. The method comprises: providing a Si substrate; forming an initial SiO.sub.2 layer overlying the Si substrate; forming an initial polysilicon layer overlying the initial SiO.sub.2 layer; forming SiO.sub.2 layer overlying the initial polysilicon layer; repeating the polysilicon and SiO.sub.2 layer formation, forming a superlattice; doping the superlattice with a rare earth element; depositing an electrode overlying the doped superlattice; and, forming an EL device. In one aspect, the polysilicon layers are formed by using a chemical vapor deposition (CVD) process to deposit an amorphous silicon layer, and annealing. Alternately, a DC-sputtering process deposits each amorphous silicon layer, and following the forming of the superlattice, polysilicon is formed by annealing the amorphous silicon layers. Silicon dioxide can be formed by either thermal annealing or by deposition using a DC-sputtering process.