SrBi.sub.2Nb.sub.2O.sub.9 (SBN) thin films are deposited on Pt/TiO2/SiO2/Si substrates using off-axis pulsed laser deposition technique. Off-axis laser ablation avoids plasma damaging of the surface of SBN thin films and is favorable to grow films along the polarization axis (a b plane). SBN thin films are grown at 350.degree. C. substrate temperature, with 5 mm away from the plasma focus, and annealed at 750.degree. C. for 1 hour in oxygen ambient. These SBN thin films exhibited giant remnant polarization (P.sub.r) of 50 .mu.C/cm.sup.2 with coercive field of 190 kV/cm. The fatigue endurance of these SBN thin films was measured at 400 kV/cm and showed minimal (<20%) polarization degradation of up to 10.sup.10 switching cycles. The leakage current density of SBN thin films was found to be about 2.times.10.sup.7 up to an applied field of 100 kV/cm. The above-mentioned properties of off-axis deposited SBN thin films, makes it a good material for NVRAM devices.