The invention reduces the size of an element chip and reduces the manufacturing cost in a thin film transistor type display device in which thin film transistors are formed on a first substrate, wiring lines are formed on a second substrate, and the element chip, including one or more thin film transistors, is peeled off from the first substrate and transferred to the second substrate. In the patterning process of the thin film transistors, holographic lithography or a dynamic auto focus system is used, a design rule of 1.0 .mu.m or less is used, and only a polycrystalline silicon layer and a first metal layer are used as the wiring lines of the element chip.

 
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> Poly/silicide stack and method of forming the same

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