A method for growing a silicon crystal by a Czochralsky method, wherein,
let a pulling speed be V (mm/min) and an average value of an in-crystal
temperature gradient in a pulling axis direction within a temperature
range, a silicon melting point to 1350.degree. C., be G (.degree. C./mm),
V/G ranges from 0.16 to 0.18 mm.sup.2/.degree. C. min between a crystal
center position and a crystal outer periphery position, and a ratio G
outer/G center of an average value G of an in-crystal temperature
gradient in a pulling axis direction within a temperature range, a
silicon melting point to 1350.degree. C., at a crystal outer surface to
that at a crystal center is set to up to 1.10 to thereby obtain a
high-quality perfect crystal silicon wafer. Such a perfect crystal
silicon wafer, wherein an oxygen concentration is controlled to up to
13.times.10.sup.17 atoms/cm.sup.3, an initial heat treatment temperature
is at least up to 500.degree. C. and a temperature is raised at up to
1.degree. C./min at least within 700 to 900.degree. C., thereby making
uniform a wafer radial distribution to an arbitrary oxygen precipitation
density level.