In a method for removing a nitride layer of a semiconductor device, an
etchant including about 15 to about 40 percent by volume of hydrofluoric
acid, about 15 to about 60 percent by volume of phosphorous acid, and
about 25 to about 45 percent by volume of deionized water is prepared.
The etchant is provided onto a nitride layer that is formed on a bevel, a
front side or a backside of a substrate to remove the nitride layer. The
substrate is rinsed using deionized water, and then the substrate is
dried. The etchant rapidly removes the nitride layer at a relatively low
temperature to avoid damage to the substrate.