The invention encompasses methods of forming metal nitride proximate
dielectric materials. The metal nitride comprises two portions, with one
of the portions being nearer the dielectric material than the other. The
portion of the metal nitride nearest the dielectric material is formed
from a non-halogenated metal-containing precursor, and the portion of the
metal nitride further from the dielectric material is formed from a
halogenated metal-containing precursor. The methodology of the present
invention can be utilized for forming capacitor constructions, with the
portion of the metal nitride formed from the halogenated metal-containing
precursor being incorporated into a capacitor electrode.