A semiconductor device is disclosed, which comprises a semiconductor
substrate, source/drain regions formed in the semiconductor substrate, a
gate insulating film formed on a channel region between the source/drain
regions, a gate electrode formed on the gate insulating film, and a
sidewall insulating film formed on a sidewall surface of the gate
electrode, wherein the gate electrode is made of SiGe, the sidewall
insulating film is an insulating film obtained by oxidizing the sidewall
surface of the gate electrode, and the sidewall insulating film contains
silicon oxide as a main component.