A semiconductor processing method of forming a plurality of conductive
lines includes, a) providing a substrate; b) providing a first conductive
material layer over the substrate; c) providing a first insulating
material layer over the first conductive layer; d) etching through the
first insulating layer and the first conductive layer to the substrate to
both form a plurality of first conductive lines from the first conductive
layer and provide a plurality of grooves between the first lines, the
first lines being capped by first insulating layer material, the first
lines having respective sidewalls; e) electrically insulating the first
line sidewalls; and f) after insulating the sidewalls, providing the
grooves with a second conductive material to form a plurality of second
lines within the grooves which alternate with the first lines. Integrated
circuitry formed according to the method, and other methods, is also
disclosed.