Disclosed is a method for forming a plurality of metal structures having
different heights on a semiconductor substrate. The disclosed method for
manufacturing a metal structure having different heights includes:
forming a plurality of seed layers, to have heights corresponding to the
metal structure to be formed, on a semiconductor substrate so that those
layers can be electrically separated, performing a plating process using
a plating mold, and applying different currents to the respective seed
layers so that the plating thickness can be adjusted for each of the seed
layers. Accordingly, a plurality of metal structures having different
heights can be obtained by a plating mold forming process and a plating
process that are performed just once, respectively.