The present invention provides silicon based thin-film structures that can
be used to form high frequency optical modulators. Devices of the
invention are formed as layered structures that have a thin-film
dielectric layer, such as silicon dioxide, sandwiched between silicon
layers. In one aspect of the invention an electrical contact structure is
provided. The electrical contact structure comprises a connecting portion
that electrically connects an active region of at least one of the
silicon layers to a contact portion of the electrical contact structure.