Magnetically enhanced sputtering methods and apparatus are described. A
magnetically enhanced sputtering source according to the present
invention includes an anode and a cathode assembly having a target that
is positioned adjacent to the anode. An ionization source generates a
weakly-ionized plasma proximate to the anode and the cathode assembly. A
magnet is positioned to generate a magnetic field proximate to the
weakly-ionized plasma. The magnetic field substantially traps electrons
in the weakly-ionized plasma proximate to the sputtering target. A power
supply produces an electric field in a gap between the anode and the
cathode assembly. The electric field generates excited atoms in the
weakly ionized plasma and generates secondary electrons from the
sputtering target. The secondary electrons ionize the excited atoms,
thereby creating a strongly-ionized plasma having ions that impact a
surface of the sputtering target to generate sputtering flux.