A magnetoresistive solid-state storage device (MRAM) employs error correction coding (ECC) to form ECC encoded stored data. In a read operation, a set of test cells in a test row are used to predict failures amongst a set of cells of interest storing a block of ECC encoded data. Erasure information is formed from these predictions which identifies potentially unreliable symbols in the block of ECC encoded data, and the ability of a decoder to perform ECC decoding is substantially enhanced.

 
Web www.patentalert.com

> Method and apparatus for testing tunnel magnetoresistive effect element

~ 00309