A process for forming an oxide layer includes forming a first oxide portion over a substrate at a temperature below a threshold temperature. A second oxide portion is formed under the first oxide portion at a temperature above the threshold temperature. The substrate is illustratively oxidizable silicon and the threshold temperature is the viscoelastic temperature of silicon dioxide.

 
Web www.patentalert.com

> Method of forming silicon-containing insulation film having low dielectric constant and low film stress

~ 00308