The present invention discloses a method including providing a substrate; forming a dielectric over the substrate, the dielectric having a k value of about 2.5 or lower, the dielectric having a Young's modulus of elasticity of about 15 GigaPascals or higher; forming an opening in the dielectric; and forming a conductor in the opening.The present invention further discloses a structure including a substrate; a dielectric located over the substrate, the dielectric having a k value of 2.5 or lower, the dielectric having a Young's modulus of elasticity of about 15 GigaPascals or higher; an opening located in the dielectric; and a conductor located in the opening.

 
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> Transfer-molded power device and method for manufacturing transfer-molded power device

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