A semiconductor device (100) has, as its well layer, a III V compound semiconductor layer (106) containing, as V-group components, nitrogen, antimony, and one or more V-group elements other than nitrogen and antimony to improve emission characteristics. Such a III V compound semiconductor layer is formed by repeating a cycle including a process of simultaneously supplying a plurality of sources containing at lest indium, and a process of simultaneously supplying a plurality of sources not containing indium but containing antimony.