A semiconductor device comprising a semiconductor substrate, and a capacitor provided above the semiconductor substrate, and including a bottom electrode, a top electrode and a dielectric film between the bottom and top electrodes, the bottom electrode including a conductive film selected from a noble metal film and a noble metal oxide film, a metal oxide film having a perovskite structure, provided between the dielectric film and the conductive film, expressed by ABO.sub.3, and containing first metal element as B-site element, and a metal film provided between the conductive film and the metal oxide film, and containing second metal element which is B-site element of a metal oxide having a perovskite structure, a decrease of Gibbs free energy when the second metal element forms oxide being larger than that when the first metal element forms oxide, a thickness of the metal oxide film being 5 nm or less.