A reflective mask (e.g., an EUV reflective mask) and a method of making such a mask are disclosed. The mask includes an absorbent substrate and a reflective coating overlying the substrate. The reflective coating is patterned to include a circuit design that is to be transferred onto one or more wafers, and more particularly onto one or more die on the wafers, during semiconductor fabrication processing. The mask includes no other radiation absorbent material, and the occurrence and severity of dead zones, which commonly occur in conventional reflective masks and which degrade the fidelity of pattern transfers, are thereby mitigated. A methodology for inspecting the mask via the transmission of visible, UV or deep-UV radiation through the mask is also disclosed.