Method and structure use support layers to assist in planarization
processes to form conductive materials (e.g., a Group VIII metal) in an
opening. Further, such method and structure may use a Group VIII metal as
an etch stop or end point for the planarization process with subsequent
etching to remove undesired portions of the Group VIII metal. One
exemplary method of providing a conductive material in an opening
includes providing a substrate assembly having at least one surface and
providing an opening defined through the surface of the substrate
assembly. The opening is defined by at least one surface. At least one
conductive material (e.g., at least one Group VIII metal such platinum
and/or rhodium) is formed within the opening on the at least one surface
defining the opening and on at least a portion of the substrate assembly
surface. A support film (e.g., an oxide material) is formed over the
conductive material and a fill material (e.g., a resist material) is
formed over at least a portion of the support film. The fill material at
least fills the opening. Thereafter, at least the fill material outside
of the opening is removed by planarization. The support film outside of
the opening, the at least one conductive material outside of the opening,
the fill material within the opening, and the support film within the
opening are then removed.