A semiconductor laser device is one of AlGaInAs semiconductor laser devices, and has a multi-layer structure with a n-GaAs substrate on which a n-Al.sub.0.3Ga.sub.0.7As buffer layer, a n-Al.sub.0.47Ga.sub.0.53As clad layer, active layer portion, p-Al.sub.0.47Ga.sub.0.53As clad layer and p-GaAs cap layer are formed. The active layer portion is configured as a multi-layer structure including (Al.sub.0.37Ga.sub.0.63).sub.0.97In.sub.0.03As light guide layer, Al.sub.0.1Ga.sub.0.9As active layer and (Al.sub.0.37Ga.sub.0.63).sub.0.97In.sub.0.03As light guide layer. By using the AlGaInAs layer to which In is added is used as the light guide layers, the active layer is under compressive strain. Accordingly, the lattice constant of the active layer at the laser emitting edge becomes smaller due to a force from the adjacent light guide layers. The band gap energy of the active layer near the laser emitting edge becomes larger than the inside of laser device, thereby forming the window structure.