An electrostatic discharge analysis method includes extracting the pads from an input layout of the semiconductor integrated circuit; extracting the nets connected to the extracted pads; extracting the protective elements connected to the extracted nets; forming connection nodes that connect the pads or the protective elements to the nets; extracting for each net, distributed resistances that distribute along the net; connecting the distributed resistances to the connection nodes in place of the nets; forming inter-resistance nodes between the distributed resistances; and calculating an inter-pad voltage when flowing electrostatic discharge current between the pads.