Repeater cells each comprising a buffer or an inverter and an n+ diffusion
layer-P well type protection diode or a p+ diffusion layer-N well type
antenna protection diode connected to an input pin of the buffer or the
inverter for preventing antenna damage or an antenna rule error from
occurring are previously registered by registration means 511 as the
cells to be registered in a cell library 505. Whether or not a wiring
conductor conducting to a gate electrode becomes an antenna ratio
exceeding an allowed antenna ratio in the semiconductor device is
determined by determination means 514 and if the wiring conductor exceeds
the allowable antenna ratio, one or more repeater cells are inserted into
any point of the wiring conductor by selection means 515.