Disclosed are a connecting method of a sense amplifier and a semiconductor
memory device using the same. The semiconductor memory device comprises a
memory cell array including a plurality of word lines connected
respectively to a plurality of memory cell blocks, each of which is
composed of a plurality of memory cells, in a row direction of the memory
cells, and a plurality of pairs of bit lines connected respectively to
the plurality of memory cell blocks in a column direction of the memory
cells; and a plurality of sense amplifier arrays, each of which includes
a plurality of sense amplifiers, each of which is connected to bit lines
and complementary bit lines of the plurality of pairs of bit lines, for
sensing a potential difference between the bit lines and the
complementary bit lines.