A mask pattern correction method capable of preventing a position of a pattern from deviating by deformation of a mask due to gravity, a mask production method, a mask, and a production method of a semiconductor device capable of forming a fine pattern with high accuracy are provided. A mask pattern correction method, a mask production method, a mask produced thereby and a production method of a semiconductor device using the mask include a step of creating first position data indicating positions of a plurality of marks when supporting a first thin film having the marks in a state where a first surface directs upward, a step of creating second position data indicating mark positions when supporting the first thin film in a state where a second surface directs upward, a step of obtaining a transfer function for converting the first position data to the second position data, and a step of correcting a mask pattern as a shape of exposure beam transmission portions formed on a second thin film by using an inverse function of the transfer function.