The invention includes a semiconductor construction. The construction has
a semiconductor material die with a front surface, a back surface in
opposing relation to the front surface, and a thickness of less than 400
microns between the front and back surfaces. The construction also has
circuitry associated with the die and over the front surface of the die,
and a layer touching the back surface of the die. The layer can
correspond to getter-inducing material and/or to a stress-inducing
material. The layer can have a composition which includes silicon dioxide
and/or silicon nitride. The composition can include one or more hydrogen
isotopes, and the hydrogen isotopes can have a higher abundance of
deuterium than the natural abundance of deuterium.