A memory including reference cells is provided. The memory has address decoding circuitry and an array of memory cells that are non-volatile and re-writable. Each memory cell has a two terminal memory plug that is capable of experiencing a change in resistance. Sensing circuitry compares activated memory cells to a reference level. The reference level is typically generated by at least one reference cell that can be selected at the same time the memory cell is selected.

 
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> Electrolyte for electrolytic capacitor and electrolytic capacitor using the same

> Fault detecting apparatus designed to detect different types of faults of gas sensor

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