By having substantially narrow pitches between wires in a first wiring layer located in an interlayer insulating layer of a semiconductor integrated circuit device, a total amount of the first wiring layer in the interlayer insulating film may be increased, thereby reducing a total amount of the interlayer insulating film having low hardness, which causes warping. As a result, stresses that are typically applied on a protective film of the semiconductor integrated circuit device due to the warping may be prevented. This may prevent the occurrence of a crack, etc. in the protective film. Therefore, it may be possible to prevent failures such as electrical disconnection of a second wiring layer above the protective film due to the crack in the protective film.

 
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