A composition for coating a photoresist pattern includes water and a compound including a repeating unit represented by Formula 1. The composition is coated on a previously formed pattern, thereby effectively reducing a size of a space or contact hole of photoresist pattern. A method for forming a photoresist pattern using the composition is usefully applied to all semiconductor processes for forming a fine pattern. wherein R.sub.1 to R.sub.6, R', R'' and n are defined in the specification.

 
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< Chemically amplified positive photoresist composition for thick film, thick-film photoresist laminated product, manufacturing method for thick-film resist pattern, and manufacturing method for connection terminal

< CHEMICALLY AMPLIFIED POSITIVE PHOTORESIST COMPOSITION FOR THICK FILM, THICK-FILM PHOTORESIST LAMINATED PRODUCT, MANUFACTURING METHOD FOR THICK-FILM RESIST PATTERN, AND MANUFACTURING METHOD FOR CONNECTION TERMINAL

> Laser marking of documents of value

> Photosensitive resin composition, method for preparing the same, and dry film resist comprising the same

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