A magnetic random access memory is provided including a substrate, a
magnetoresistance element which includes a ferromagnetic layer having an
invertible spontaneous magnetization, which varies in resistance
according to the direction of the spontaneous magnetization, and is
formed above the substrate, and a wiring which extends in a first
direction and is used for making an electric current flow to generate a
magnetic field to be applied to the magnetoresistance element. The wiring
is formed so as to pass through a first position which is closer to the
substrate than the magnetoresistance element and does not overlap the
magnetoresistance element when viewed from a direction perpendicular to
the main surface of the substrate, and a second position being above said
magnetoresistance element.