A method verifying an optical proximity correction (OPC) model is disclosed. The method can include correcting a test pattern having a plurality of structures and extracting critical dimension (CD) values from a corrected output file for layout locations corresponding to a plurality of selected structures of the test pattern. A data set from the extracted CD values can be developed where the data set is indicative of corrected test pattern CD versus pitch for at least one target CD. Also disclosed is a method of collecting wafer test measurement data.