The invention provides a semiconductor laser device including an active layer,
a semiconductor layer provided with a diffraction grating, an etch-stop layer,
a cladding layer provided with a stripe structure, and a current blocking layer
arranged at least on a side of said stripe structure, formed in that order on a
substrate. In this semiconductor laser device, the etching-stop layer is formed
on the semiconductor layer with the diffraction grating, so that damage of the
diffraction grating due to etching can be prevented. The invention also provides
a distributed Bragg reflection semiconductor laser device, including an active
layer, and a current blocking layer having a stripe-shaped window and a diffraction
grating formed at least near an end face thereof. This semiconductor laser device
can be manufactured with fewer crystal growth processes than conventional semiconductor
laser devices.