A spin valve magnetoresistance sensor of a thin film magnetic head. In one embodiment, a spin valve magnetoresistance sensor is provided with a spin valve film, in which a base layer including a first base film of Ta or some other nonmagnetic metal and, on top of this, a second base film of an alloy represented by NiFeX (where X is at least one element selected from among Cr, Nb, Rh) is formed on a substrate, and on top of this are formed by layering a free magnetic layer and pinned magnetic layer arranged to enclose a nonmagnetic conductive layer, as well as an antiferromagnetic layer, the second base film has an fcc (face-centered cubic) structure and also has a (111) orientation.

 
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< Disk drive comprising depletion mode MOSFET for protecting a head from electrostatic discharge

< Magnetoresistance effect element, magnetic head and magnetic recording and/or reproducing system

> Systems and methods for providing automatic access to data media in a data storage system

> Seeking a transducer with a current command regulated based on transducer location and addressed data block

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