There is provided a magnetic memory device which has a small switching current
for a writing line and which has a small variation therein. A method for producing
such a magnetic memory device includes: forming a magnetoresistive effect element;
forming a first insulating film so as to cover the magnetoresistive effect element;
forming a coating film so as to cover the first insulating film; exposing a top
face of the magnetoresistive effect element; forming an upper writing line on the
magnetoresistive effect element; exposing the first insulating film on a side portion
of the magnetoresistive effect element by removing a part or all of the coating
film; and forming a yoke structural member so as to cover at least a side portion
of the upper writing line and so as to contact the exposed first insulating film
on the side portion of the magnetoresistive effect element.