A memory array with components that can withstand high temperature fabrication is provided. Some memory materials require high temperature process steps in order to achieve desired properties. During fabrication, a memory material is deposited on structures that may include metal lines and barrier layers. Such structures are then exposed to the high temperature processing steps and should be resistant to such temperatures.

 
Web www.patentalert.com

< Field emission phase change diode memory

< Method of depositing dielectric films

> Method of forming integrated circuit contacts

> Low-thermal-budget gapfill process

~ 00260