A semiconductor device includes an active element structure that is formed on a semiconductor substrate and has a connection region formed in the surface of the semiconductor substrate. A contact hole extends from a surface of a first insulating film formed on the semiconductor substrate to the connection region. A contact plug is provided in the contact hole. A clearance formed in the contact plug is formed with a buried conductive film consisting of a material different from the contact plug. The buried conductive film has a continuous surface without forming a step with the surface of the contact plug.