Embodiments of a transition metal alloy having an n-type or p-type work function that does not significantly shift at elevated temperature. The disclosed transition metal alloys may be used as, or form a part of, the gate electrode in a transistor. Methods of forming a gate electrode using these transition metal alloys are also disclosed.

 
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> Chip scale packaging with improved heat dissipation capability

> Semiconductor device having layered interconnect structure with a copper or platinum conducting film and a neighboring film

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