A semiconductor device having a silicon single crystal substrate and a boron phosphide semiconductor layer containing boron and phosphorus as constituent elements on a surface of the silicon single crystal substrate is disclosed. The surface of the silicon single crystal substrate is a {111} crystal plane inclined at an angle of 5.0 to 9.0 toward a 110 crystal azimuth.

 
Web www.patentalert.com

< Light emitting device with blue light LED and phosphor components

< Optical devices with engineered nonlinear nanocomposite materials

> Multiplex laser-light source and exposure system

> Optical devices with engineered nonlinear nanocomposite materials

~ 00254