A ferroelectric memory device and a method of formation are disclosed. In one particular embodiment, a ferroelectric memory device comprises a first electrode layer formed on a substrate, a ferroelectric polymer layer formed on substantial portion of a first electrode layer, a thin layer of conductive ferroelectric polymer formed on a substantial portion of the ferroelectric polymer layer, where the ferroelectric polymer may be made conductive by doping with conductive nano-particles, and a second electrode layer formed on at least a portion of the carbon doped ferroelectric polymer layer.

 
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< Aqueous room temperature living radical polymerization of vinyl halides

< Polyester and process therefor

> Self-assembled sub-nanolayers as interfacial adhesion enhancers and diffusion barriers

> Scatterometry alignment for imprint lithography

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