A semiconductor module includes a plurality of semiconductor memory devices, a
registered buffer, a PLL circuit and a test mode entry circuit. The test mode entry
circuit receives a signal MRS, a bank address signal and an address signal from
the registered buffer, directly and externally receives a signal formed of a high
voltage level higher than the voltage level in a normal operating range, generates
a deactivating signal for deactivating the PLL circuit and a test mode shift signal
formed of the high voltage level, applying the deactivating signal to the PLL circuit,
and applying the test mode shift signal to the plurality of semiconductor memory
devices. Consequently, the plurality of semiconductor memory devices included in
the module can be shifted to the test mode in the modular state.