The semiconductor device includes a semiconductor substrate in which is formed an integrated circuit, the semiconductor substrate having electrodes; a first resin section formed in a central portion of a surface of the semiconductor substrate on which the electrodes are formed; a plurality of second resin sections formed on the surface of the semiconductor substrate on which the electrodes are formed, in a region closer to an edge portion of the semiconductor substrate than the first resin section; an interconnect formed over the first resin section and one of the electrodes; and a resin layer formed to cover the interconnect and extend from the first resin section to outer sides of the second resin sections.