A method for controlling a semiconductor processing apparatus including a vacuum processing chamber, a plasma apparatus for generating plasma inside the vacuum processing chamber, and a process controller for controlling a process by holding a process recipe including plasma cleaning of inside of the vacuum processing chamber constant, comprises the steps of detecting process abnormality of the process on the basis of sensor data detected by sensors arranged in the semiconductor processing apparatus, and executing a recovery step for removing deposition deposited inside the vacuum processing chamber when abnormality is detected.