A nonvolatile ferroelectric memory device having a multi control function can
amplify
sensing voltage levels in a sensing critical voltage and determine a plurality
of cell data when a plurality of reference timing strobes are applied on a basis
of a time axis. In a read mode, a plurality of read data applied from a cell array
block are stored in a read/write data register array unit through a common data
bus unit. In a write mode, a plurality of read data stored in the read/write data
register array unit or input data applied from a timing data buffer unit are stored
in a cell array block through the common data bus unit. Here, since a plurality
of sensing voltage levels are set in cell data, a plurality of sensed data bits
can be stored in one cell.