A semiconductor device of this invention includes a silicon nitride film formed on a semiconductor substrate and having a density of 2.2 g/cm3 or less, and a silicon oxide film formed on the silicon nitride film in an ambient atmosphere containing TEOS and O3.

 
Web www.patentalert.com

< Process for cleaning silicon surface and fabrication of thin film transistor by the process

< Methods for forming silicon dioxide layers on substrates using atomic layer deposition

> Method for forming a silicon nitride layer

> Fabrication method for semiconductor integrated devices
~ 00236