The low-cost lithography disclosed in the present invention is based on two approaches: 1. Use a low-precision nF-opening mask to implement high-precision opening-related patterns (e.g. inter-level connections and segmented-lines); 2. Improve the mask re-usability with programmable litho-system and/or logic litho-system. Pattern distribution enables the mask-repair through redundancy. It further enables highly-corrected masks, which provide higher-order correction to clear patterns on wafer.