Numerous embodiments of a stacked device filler and a method of formation are disclosed. In one embodiment, a method of forming a stacked device filler comprises forming a material layer between two or more substrates of a stacked device, and causing a reaction in at least a portion of the material, wherein the reaction may comprise polymerization, and the material layer may be one or a combination of materials, such as nonconductive polymer materials, for example.

 
Web www.patentalert.com

< High performance diode implanted voltage controlled p-type diffusion resistor

< Semiconductor device with high structural reliability and low parasitic capacitance

> Semiconductor device with improved reliability and manufacturing method of the same

> Semiconductor device formed having a metal layer for conducting the device current and for high contrast marking and method thereof

~ 00230