A magnetic memory device includes a first wiring layer which runs in the first direction, a memory element which is arranged above the first wiring layer, second wiring layers which are arranged on the memory element and run in a second direction different from the first direction, and a first magnetic shield layer which is formed on the side surface of each second wiring layer and formed around the side surface of the memory element.

 
Web www.patentalert.com

< Methods of removing material from a semiconductor substrate

< Layer configuration comprising an electron-blocking element

> Semiconductor memory with memory cells comprising a vertical selection transistor and method for fabricating it

> High-performance non-volatile memory device and fabrication process
~ 00227