A ferroelectric memory includes read-write memory cells having a comparatively weak imprint characteristic and read-only memory cells having a comparatively strong imprint characteristic. Data written in the read-only memory cells are imprinted by, for example, writing the same data repeatedly, after which the imprinted data cannot be altered at the normal read-write voltage. The memory can be fabricated by forming a first base layer and a second base layer having different chemical compositions, and forming ferroelectric capacitors on the different base layers. The first and second base layers may serve as adhesion layers promoting adhesion between lower electrodes of the ferroelectric capacitors and an underlying insulation layer. The ferroelectric capacitors may include a ferroelectric film having a constituent metallic element present in the second base film but not in the first base film.